PD - 94436C AUTOMOTIVE MOSFET IRF2804 IRF2804S I.
IRF2804S-7P - AUTOMOTIVE MOSFET
PD - 96891 AUTOMOTIVE MOSFET IRF2804S-7P Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Opera.AUIRF2804 - Power MOSFET
AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avala.IRF2804L - HEXFET Power MOSFET
PD - 94436C AUTOMOTIVE MOSFET IRF2804 IRF2804S IRF2804L HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resista.IRF2804S - HEXFET Power MOSFET
PD - 94436C AUTOMOTIVE MOSFET IRF2804 IRF2804S IRF2804L HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resista.AUIRF2804L - Power MOSFET
AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avala.AUIRF2804S - Power MOSFET
AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avala.AUIRF2804S-7P - Power MOSFET
PD - 97459 AUTOMOTIVE GRADE AUIRF2804S-7P Features l l l l l l l HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 1.6mΩ 320A 240.IRF2804L - HEXFET Power MOSFET
IRF2804 IRF2804S/L Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast S.IRF2804 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2804,IIRF2804 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.0mΩ ·Enhancement mo.IRF2804S - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot var.IRF2804 - HEXFET Power MOSFET
PD - 94436C AUTOMOTIVE MOSFET IRF2804 IRF2804S IRF2804L HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resista.AUIRF2804 - Power MOSFET
AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Re.AUIRF2804S - Power MOSFET
AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Re.AUIRF2804L - Power MOSFET
AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Re.IRF2804 - HEXFET Power MOSFET
IRF2804 IRF2804S/L Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast S.IRF2804S - HEXFET Power MOSFET
IRF2804 IRF2804S/L Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast S.IRF2804PbF - HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.IRF2804SPbF - HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.IRF2804LPbF - HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.IRF2804S-7PPbF - Power MOSFET
PD - 97057A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Al.