IRF2903Z Datasheet | Specifications & PDF Download

PD - 96988A AUTOMOTIVE MOSFET IRF2903Z IRF2903ZS IRF2903ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resi

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PD - 96988A AUTOMOTIVE MOSFET IRF2903Z IRF2903ZS IRF2903ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resi

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AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanch

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AUTOMOTIVE GRADE Features l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche All

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AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanch

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PD - 96098A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Al

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AUTOMOTIVE GRADE Features l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche All

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PD - 96098A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Al

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PD - 96988A AUTOMOTIVE MOSFET IRF2903Z IRF2903ZS IRF2903ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resi

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PD -96097 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Opera

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AUTOMOTIVE GRADE PD -96379 AUIRF2903Z HEXFET® Power MOSFET D Features l l l l l l l V(BR)DSS RDS(on) typ. 30V 1.9mΩ 2.4mΩ 260Ak 160A Advanced Pr

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2903Z，IIRF2903Z ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.4mΩ ·Enhancement mod

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