IRF620 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D

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IRF620B/IRFS620B November 2001 IRF620B/IRFS620B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D

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IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI s s s s V DSS 200 V 200 V R DS( on) < 0.8 Ω < 0.8 Ω ID 6A 4

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www.vishay.com IRF620 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (

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Advanced Power MOSFET IRF620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extende

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Data Sheet January 2002 IRF620 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transi

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IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI s s s s V DSS 200 V 200 V R DS( on) < 0.8 Ω < 0.8 Ω ID 6A 4

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www.vishay.com IRF620S, SiHF620S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Q

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IRF620 Data Sheet June 1999 File Number 1577.3 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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www.DataSheet4U.com IRF620 Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A D G S N Channel Symbol ELECTRICAL CHARACTERISICS at Tj = 25

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PD - 94870 IRF620PbF • Lead-Free www.DataSheet4U.com www.irf.com 1 12/5/03 IRF620PbF 2 www.irf.com IRF620PbF www.irf.com 3 IRF620PbF 4 w

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PD - 97500A IRF6201PbF VDS RDS(on) max (@VGS = 4.5V) 20 2.45 2.75 130 27 V mΩ mΩ nC A 6 6 6 *    HEXFET® Power MOSFET  ' ' ' ' RDS(on

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF620A FEATURES ·Low RDS(on) = 0.626Ω(TYP) ·Lower Input Capacitanc

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D

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