IRF7341 Datasheet | Specifications & PDF Download

PD -91703 IRF7341 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape &

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IRF7341GPbF • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche

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PD - 94391B IRF7341Q Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag HEXFET® Power MOSFET VDSS 55V RDS

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AUTOMOTIVE MOSFET PD - 96362A AUIRF7341Q HEXFET® Power MOSFET 8 7 Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual

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Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allo

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  AUTOMOTIVE GRADE AUIRF7341Q Features  Advanced Planar Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dual N Channel MOSFET  Su

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PD -95199 IRF7341PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic d

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