IRF9Z34 Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.1Ω ·Enhancement mode: ·100% avalanche tes

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PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channe

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PD - 9.913A IRF9Z34S/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175°C Oper

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated G l Lea

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PD - 9.1525 IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Ope

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www.vishay.com IRF9Z34 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qg

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PD- 95767 IRF9Z34SPbF IRF9Z34LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 06/07/05 IRF9Z34S/LPbF 2 www.irf.com IRF9Z34S/LPbF www.irf.co

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• Lead-Free PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/L

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology

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PD - 9.1525 IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Ope

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www.DataSheet4U.com PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free www.irf.com 1 04/25/05 www.DataSheet4U.com IRF9Z34NS/LPbF 2 www.irf.com

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www.vishay.com IRF9Z34S, SiHF9Z34S Vishay Siliconix Power MOSFET D2PAK (TO-263) S G GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (

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IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configur

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PD - 9.1525 IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Ope

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AUTOMOTIVE GRADE PD - 97627A AUIRF9Z34N Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating

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PD - 9.1525 www.DataSheet4U.com IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IR

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology

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PD - 9.913A IRF9Z34S/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175°C Oper

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PD- 95767 IRF9Z34SPbF IRF9Z34LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 06/07/05 IRF9Z34S/LPbF 2 www.irf.com IRF9Z34S/LPbF www.irf.co

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