l Advanced Process Technology l Ultra Low On-Resis.
IRFZ46N - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .IRFZ46NS - POWER MOSFET
PD - 91305C Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switchi.IRFZ46NL - POWER MOSFET
PD - 91305C Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switchi.IRFZ46NLPbF - HEXFET Power MOSFET
Advanced Process Technology Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Aval.IRFZ46NSPbF - HEXFET Power MOSFET
Advanced Process Technology Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Aval.IRFZ46NPbF - Power MOSFETs
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .IRFZ46N - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ46N, IIRFZ46N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16.5mΩ ·Enhancement .IRFZ46NS - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .