IRL530 Datasheet | Specifications & PDF Download

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende

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• Lead-Free PD- 95593 IRL530NSPbF IRL530NLPbF www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 w

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isc N-Channel MOSFET Transistor IRL530N，IIRL530N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.1Ω ·Enhancement mode ·Fast Switching Speed

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• Lead-Free PD- 95593 IRL530NSPbF IRL530NLPbF www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 w

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Isc N-Channel MOSFET Transistor IRL530NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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IRL530, SiHL530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 1

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• Lead-Free PD - 95451 IRL530NPbF www.irf.com 1 6/23/04 IRL530NPbF 2 www.irf.com IRL530NPbF www.irf.com 3 IRL530NPbF 4 www.irf.com IRL530NPbF

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende

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PD - 91349C IRL530NS/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRL530NS) l Low-profile through-hole (IRL530NL) l 175°C Oper

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PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching F

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l Advanced Process Technology l Surface Mount (IRL530NS) l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully

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Power MOSFET IRL530S, SiHL530S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 100 VGS = 5.0 V 28 Qgs (nC) 3.8 Qgd (nC) 14

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