IRLR120 Datasheet | Specifications & PDF Download

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PD - 97624 AUTOMOTIVE GRADE AUIRLR120N HEXFET® Power MOSFET D • • • • • • • • • • Advanced Planar Technology Logic-Level Gate Drive Low On-Resistan

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AUTOMOTIVE GRADE   Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temper

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l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description Fifth Genera

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isc N-Channel MOSFET Transistor IRLR120N, IIRLR120N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤185mΩ ·Enhancement mode: ·100% avalanche t

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$GYDQFHG 3RZHU 026)(7 IRLR120N FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charg

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www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSF

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende

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PD- 95382A IRLR120PbF IRLU120PbF • Lead-Free www.irf.com 1 12/07/04 IRLR/U120PbF 2 www.irf.com IRLR/U120PbF www.irf.com 3 IRLR/U120PbF 4

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IRLR120NPbF IRLU120NPbF l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated

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iscN-Channel MOSFET Transistor IRLR120 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤0.27Ω @VGS=5V ·Enhancement mode: Vth = 1.0 to 2.0V (VDS =

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