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International Rectifier
IRLZ24 - HEXFET POWER MOSFET
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International Rectifier
IRLZ24NPBF - Power MOSFET
www.DataSheet4U.com PD - 94998 IRLZ24NPbF • Lead-Free DataShee DataSheet4U.com www.irf.com 1 2/11/04 DataSheet4U.com DataSheet 4 U .com www.
International Rectifier
AUIRLZ24NL - Power MOSFET
AUTOMOTIVE GRADE AUIRLZ24NS AUIRLZ24NL Features l Advanced Process Technology l Logic Level Gate Drive l 175°C Operating Temperature l Fast Switchin.
International Rectifier
IRLZ24N - HEXFET POWER MOSFET
www.DataSheet4U.com PD - 91357C HEXFET® Power MOSFET l l l l l l IRLZ24N VDSS = 55V Logic-Level Gate Drive Advanced Process Technology Dynamic dv/.
International Rectifier
IRLZ24S - HEXFET POWER MOSFET
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Samsung Electronics
IRLZ24 - N-Channel MOSFET
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Samsung Electronics
IRLZ24A - Advanced Power MOSFET
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International Rectifier
IRLZ24NL - Power MOSFET
www.DataSheet4U.com PD - 91358E IRLZ24NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hol.
International Rectifier
IRLZ24NS - Power MOSFET
www.DataSheet4U.com PD - 91358E IRLZ24NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hol.
International Rectifier
IRLZ24NSPBF - Power MOSFET
www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Opera.
International Rectifier
IRLZ24NLPBF - Power MOSFET
www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Opera.
Vishay Siliconix
IRLZ24L - Power MOSFET
www.vishay.com IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-263) S GD D G S G S N-Channel MO.
Vishay Siliconix
IRLZ24S - Power MOSFET
www.vishay.com IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-263) S GD D G S G S N-Channel MO.
Vishay
IRLZ24 - Power MOSFET
Power MOSFET IRLZ24, SiHLZ24 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 18.
International Rectifier
AUIRLZ24NS - Power MOSFET
AUTOMOTIVE GRADE AUIRLZ24NS AUIRLZ24NL Features l Advanced Process Technology l Logic Level Gate Drive l 175°C Operating Temperature l Fast Switchin.
INCHANGE
IRLZ24N - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ24N， IIRLZ24N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.06Ω ·Enhancement m.
INCHANGE
IRLZ24NS - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.