Infineon BSC Datasheet | Specifications & PDF Download

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BSC012N06NS MOSFET OptiMOSTM5 Power-Transistor, 60 V Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal re

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BSC009N04LSSC MOSFET OptiMOSTM Power-MOSFET, 40 V Features • Dual-side cooled package with lowest junction-top thermal resistance • Optimized for syc

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BSC010N04LSC (UL2595) MOSFET OptiMOSTM5 Power-Transistor, 40V Features • UL-2595 standard1) compliant with increased creepage distance • Drain to so

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BSC014N04LSI MOSFET OptiMOSTM Power-MOSFET, 40 V Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Ver

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BSC014N06NST MOSFET OptiMOSTM Power-Transistor, 60 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 175 °C rated • 100% avalanche

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Public BSC004NE2LS5 Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 25 V Features • Optimized for OR‑ing application • Very low on‑resistance RD

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BSC040N10NS5SC MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rat

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BSC010N04LS6 MOSFET OptiMOSTM 6 Power-Transistor, 40 V Features • Optimized for synchronous application • Very low on-resistance RDS(on) • 100% avala

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BSC059N03S OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified acco

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D at a Sh e e t , D S 1 , Ja n . 2 00 3 www.DataSheet4U.com ISAC-SX ISDN Subscriber Access Controller PEB 3086, V 1.4 Wired Communications N e v e

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www.DataSheet4U.com n-Channel Power MOSFET OptiMOS™ BSC0901NSI Data Sheet 2.0, 2011-03-29 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSC

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BSC119N03S G OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified ac

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OptiMOSTM3 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level

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BSC022N04LS6 MOSFET OptiMOSTM 6 Power-Transistor, 40 V Features • Optimized for synchronous application • Very low on-resistance RDS(on) • 100% avala

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