.
Mitsubishi
MGFC42V6472 - C band internally matched power GaAs FET
< C band internally matched power GaAs FET > MGFC42V6472 6.4 – 7.2 GHz BAND / 16W DESCRIPTION The MGFC42V6472 is an internally impedance-matched GaAs .
Eudyna Devices
FLM3742-8F - C-Band Internally Matched FET
www.DataSheet4U.com FLM3742-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 11.0d.
Advanced Semiconductor
ALN0892R2 - Internally Matched LNA Module
plerowTM ALN0892R2 www.DataSheet4U.com Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount modu.
Advanced Semiconductor
ALN1250 - Internally Matched LNA Module
plerowTM ALN1250 www.DataSheet4U.com Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module.
Advanced Semiconductor
ALN1700 - Internally Matched LNA Module
plerowTM ALN1700 www.DataSheet4U.com Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module.
Excelics Semiconductor
EIC1010A-12 - Internally Matched Power FET
www.DataSheet4U.com EIC1010A-12 ISSUED: 07/24/2007 10.0-10.25 GHz 12-Watt Internally Matched Power FET Excelics FEATURES • • • • • • 10.0-10.25GHz .
Excelics Semiconductor
EIB1718-2P - 17.7-18.7GHz Internally Matched Power FET
Excelics • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46d.
Excelics Semiconductor
EIA1819-1P - 18.7-19.7GHz 1W Internally Matched Power FET
Excelics • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43d.
Mitsubishi
MGFC41V3642 - C band internally matched power GaAs FET
< C band internally matched power GaAs FET > MGFC41V3642 3.6 – 4.2 GHz BAND / 14W DESCRIPTION The MGFC41V3642 is an internally impedance-matched GaAs .
Mitsubishi
MGFC44V3436 - C band internally matched power GaAs FET
< C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs.
Mitsubishi
MGFC45V6472A - C band internally matched power GaAs FET
< C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION The MGFC45V6472A is an internally impedance-matched Ga.FLM8596-8F - Ku-Band Internally Matched FET
FLM8596-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: .FLM3742-4F - C-Band Internally Matched FET
FLM3742-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.) High PAE: ηad.FLM3742-25F - C-Band Internally Matched FET
FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 10.5dB (Typ.) High PAE: ηa.FLM1213-4F - Ku-Band Internally Matched FET
FLM1213-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 6.5dB (Typ.) High PAE: .
Fujitsu
FLM5964-12F - C-Band Internally Matched FET
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Fujitsu
FLM5964-12DA - Internally Matched Power GaAs FETs
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Mitsubishi Electric
MGFC41V6472 - C band internally matched power GaAs FET
< C band internally matched power GaAs FET > MGFC41V6472 6.4 – 7.2 GHz BAND / 12W DESCRIPTION The MGFC41V6472 is an internally impedance-matched GaAs .
Advanced Semiconductor
ALN0140WT - Internally Matched LNA Module
plerowTM ALN0140WT www.DataSheet4U.com Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount modu.
