K363 Datasheet | Specifications & PDF Download

BK3633 Datasheet V1.5 Bluetooth 5.2 Dual Mode and Proprietary 2.4 GHz Wireless System on Chip Specification Beken Corporation Building 41, Capital

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SMD Type www.DataSheet4U.com IC MOSFET MOS Field Effect Transistor 2SK3635 Features High voltage: VDSS = 200 V Gate voltage rating: 30 V +0.15 5.55-

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SMD Type www.DataSheet4U.com Transistors IC Silicon N-channel Power MOSFET 2SK3637 TO-263 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-resis

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DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3638 is N-channel MOS FET de

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DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3635 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3635 is N-channel MOS FET d

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isc N-Channel MOSFET Transistor 2SK3634I FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Re

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Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed switching (10.0) 26.5±0.5 (4

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DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3634 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3634 is N-channel MOS FET d

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Ap

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isc N-Channel MOSFET Transistor 2SK3635I FEATURES ·Drain Current : ID=8A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Res

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Ap

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DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3639 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3639 is N-channel MOS FET

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2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS IV) www.DataSheet4U.com 2SK3633 Unit: mm Switching Regulator Applications

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SMD Type www.DataSheet4U.com IC MOSFET MOS Field Effect Transistor 2SK3634 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High voltage: VDSS

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iscN-Channel MOSFET Transistor 2SK3633 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (MAX) ·Enhancement mode: Vth = 2 to 4 V (VDS = 10 V

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SMD Type www.DataSheet4U.com Transistors IC Silicon N-channel Power MOSFET 2SK3636 TO-263 + 0 .1 1 .2 7 -0 .1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2

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SMD Type www.DataSheet4U.com IC MOSFET MOS Field Effect Transistor 2SK3638 TO-252 +0.15 1.50-0.15 Features Low on-state resistance RDS(on)1 = 8.5 m

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DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3639 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3639 is N-channel MOS FET

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Photocoupler K3630 • K3631 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin

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