| Part Number | Description | Manufacture |
|---|---|---|
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N-Channel 30V Fast Switching MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.5mΩ ID (TC=25℃) 154A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Ne |
 UBIQ |
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N-Channel 30V Fast Switching MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 2.6mΩ ID (TC=25℃) 110A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Ne |
UBIQ |
|
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N-Channel 30V Fast Switching MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 6.3mΩ ID (TC=25℃) 68A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Net |
UBIQ |
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N-Channel 30V Fast Switching MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.5mΩ ID (TC=25℃) 154A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Ne |
UBIQ |
|
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Low-Side Gate Driver 3A Peak Sink/Source at VDD = 12V 4.5 to 18V Operating Range 2.5A Sink / 1.8A Source at VDD = 6V Dual-Logic Inputs Allow Configuration as Non-Inverting or Inverting with Enable Function Internal Resistors Turn Driver Off If No In |
 Fairchild Semiconductor |
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CLOCK GENERATOR/DRIVER CMOS LSI FOR BBD |
 Panasonic |
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N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0. |
Fairchild Semiconductor |
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General Purpose Amplifier Biasing to 24 dBm) are designed using a Darlington Pair (Fig. 1). The Darlington Pair is biased when voltage is applied to the collector of discrete devices Q1 and Q2. Resistor R1 is used for negative feedback of the amplifier but is also part of the voltage |
 Freescale Semiconductor |
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Digital Monolithic Interated Circuits |
 Matsushita Electric |
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NPN SILICON EPITAXIAL TRANSISTOR |
 Micro Electronics |
| Total 43 results |
