| Description | The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available ... |
| Features |
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
Product Summary
BVDSS 30V
RDSON (VGS=10V)
1.5mΩ
ID (TC=25℃)
154A
Applications
High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch
PRPAK 5X6 Pin Configuration
D
Absolute Maximum Ratings
SS...
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| Datasheet |
 QN3109M6N Datasheet - 258.82KB |
