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QN3109M6N - N-Channel 30V Fast Switching MOSFET

General Description

The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.5mΩ ID (TC=25℃) 154A.

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Datasheet Details

Part number QN3109M6N
Manufacturer UBIQ
File Size 258.82 KB
Description N-Channel 30V Fast Switching MOSFET
Datasheet download datasheet QN3109M6N Datasheet

Full PDF Text Transcription for QN3109M6N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QN3109M6N. For precise diagrams, and layout, please refer to the original PDF.

QN3109M6N NN-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which ...

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ormance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.

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