QN3109M6N mosfet equivalent, n-channel 30v fast switching mosfet.
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
Product Summary
BVDSS 30V
RDSON (VGS=10V)
1.5mΩ
ID (TC=25℃)
154A
Applicatio.
. The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved.
Features
Advanced h.
The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3109M6N meet the RoHS and Green Product req.
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