LD-603 Datasheet | Specifications & PDF Download

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CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 FEATURES 30V , 60A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=1

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CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Supe

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CEP6030LS2/CEB6030LS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 52A , RDS(ON)=13.5m Ω @VGS=10V. RD

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CEP6031LS2/CEB6031LS2 March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS(ON)=12m Ω @VGS=10V. RDS(ON

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PTAC260302FC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a 30-watt LDMOS FET intended for

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Document 406-1 USB 3.0 Common Mode Choke 0603 • Designed for high-speed USB 3.0, HDMI, SATA, IEEE1394 and LVDS applications; data rates up to 4.8 Gb

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Document 406-1 USB 3.0 Common Mode Choke 0603 • Designed for high-speed USB 3.0, HDMI, SATA, IEEE1394 and LVDS applications; data rates up to 4.8 Gb

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June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancem

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Molding Power Choke – MHSC Series MHSC Series MHSC series is designed for low profile type with low DCR and ultra large current, especially for heigh

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Molding Power Choke – MHSC Series MHSC Series MHSC series is designed for low profile type with low DCR and ultra large current, especially for heigh

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Molding Power Choke – MHSC Series MHSC Series MHSC series is designed for low profile type with low DCR and ultra large current, especially for heigh

(18 views)

Molding Power Choke – MHSC Series MHSC Series MHSC series is designed for low profile type with low DCR and ultra large current, especially for heigh

(18 views)

Document 406-1 USB 3.0 Common Mode Choke 0603 • Designed for high-speed USB 3.0, HDMI, SATA, IEEE1394 and LVDS applications; data rates up to 4.8 Gb

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CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Supe

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CEP603ALS2/CEB603ALS2 March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 25A , RDS(ON)=22m Ω @VGS=10V. RDS(ON)=

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FDP6030L/FDB6030L August 2003 FDP6030L/FDB6030L N-Channel Logic Level PowerTrenchΝ MOSFET General Description This N-Channel Logic Level MOSFET has

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