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KF5N65F - N CHANNEL MOS FIELD EFFECT TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse rec.KF10N65F - N CHANNEL MOS FIELD EFFECT TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA KF10N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristic.STGW60H65F - 650 V field stop trench gate IGBT
STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features ■ ■ ■ ■ ■ ■ High speed switching Tight parameter.FCH041N65F - MOSFET
FCH041N65F — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCH041N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 76 A, 41 mΩ Features • 700 V.KF7N65F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA KF7N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristi.FCP190N65F - N-Channel MOSFET
FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCP190N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.6 A, 190 mΩ Features • 70.FCPF150N65FL1 - MOSFET
FCPF150N65FL1 — N-Channel SuperFET® II FRFET® MOSFET May 2015 FCPF150N65FL1 N-Channel SuperFET® II FRFET® MOSFET 650 V, 24 A, 150 mΩ Features • 700.STGWT60H65FB - Trench gate field-stop IGBT
STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2 1 F.LD-65F - Single Heterojunction Stacked Diode Lasers
w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com .FCPF190N65FL1 - N-Channel MOSFET
FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCPF190N65FL1 N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.6 A, 190 mΩ Feature.FCP150N65F - MOSFET
FCP150N65F — N-Channel SuperFET® II FRFET® MOSFET FCP150N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 24 A, 150 mΩ December 2014 Features • 700 .FCH190N65F - MOSFET
FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET FCH190N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.6 A, 190 mΩ December 2014 Features • 70.FCPF260N65FL1 - N-Channel MOSFET
FCPF260N65FL1 — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCPF260N65FL1 N-Channel SuperFET® II FRFET® MOSFET 650 V, 15 A, 260 mΩ Features .KF4N65F - N CHANNEL MOS FIELD EFFECT TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA KF4N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristi.MBQ40T65FDSC - 650V Field Stop IGBT
General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excel.FCP110N65F - MOSFET
FCP110N65F — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCP110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features • 700 .FCH150N65F - MOSFET
FCH150N65F — N-Channel SuperFET® II FRFET® MOSFET FCH150N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 24 A, 150 mΩ December 2014 Features • 700 .FCH077N65F_F085 - MOSFET
FCH077N65F_F085 N-Channel SuperFET II FRFET MOSFET FCH077N65F_F085 December 2014 N-Channel SuperFET II FRFET MOSFET 650 V, 54 A, 77 mΩ Features .FCH077N65F - MOSFET
FCH077N65F — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCH077N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 54 A, 77 mΩ Features • 700 V.STGWT60H65F - 650 V field stop trench gate IGBT
STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features ■ ■ ■ ■ ■ ■ High speed switching Tight parameter.