| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor
| KLM4G1FETE-B041 | eMMC |
|
Samsung Semiconductor
| KLM4G1FEPD-B031 | 4GB eMMC |
Tyco Electronics (now TE Connectivity)
| M4G | Double-Balanced Mixer |
EPCOS (TDK Electronics)
| CT1206M4G | Multilayer technology |
|
Samsung Semiconductor
| KLM4G1YEMD-B031 | eMMC |
Hanbit Electronics
| HMF2M32M4GL | FLASH-ROM MODULE |
Toshiba
| THGBM4G7D2GBAIE | 16GB e-MMC Module |
|
Toshiba
| THGBM4G6D2HBAIR | 8GB e-MMC Module |
Nanya
| NT5CC512M4GN | 2Gb DDR3 SDRAM G-Die |
|
Nanya
| NT5CB512M4GN | 2Gb DDR3 SDRAM G-Die |
|
Hanbit Electronics
| HMF1M32M4GL | FLASH-ROM MODULE |
|
EPCOS (TDK Electronics)
| CT1210M4G | Multilayer technology |
EDAL
| M4Gx | MEDIUM CURRENT SILICON RECTIFIERS |
|
Hanbit Electronics
| HMS12832M4G | SRAM |
|
Samsung Semiconductor
| KLM4G1FE3B-B001 | e.MMC |
|
Toshiba
| THGBM4G5D1HBAIR | 4GB e-MMC Module |
Micron Technology
| MT4LC16M4G3 | DRAM |
|
Hanbit Electronics
| HMF8M8M4G | FLASH-ROM MODULE |
|
EPCOS (TDK Electronics)
| CT1812M4G | Multilayer technology |
|
Samsung Semiconductor
| KLM4G1EEHM-B101 | (KLMxGxxEHx) moviNAND |
