KLM4G1FEPD-B031 (Samsung)
4GB eMMC
SAMSUNG CONFIDENTIAL
Rev. 1.0, Dec. 2014
KLM4G1FEPD-B031
Samsung eMMC Product family
eMMC 5.0 Specification compatibility
datasheet
SAMSUNG ELECTRONIC
(90 views)
KLM4G1FETE-B041 (Samsung)
eMMC
SAMSUNG CONFIDENTIAL
Rev1.0. Feb. 2018 KLM4G1FETE-B041
Samsung eMMC Product family
eMMC 5.1 Specification compatibility
datasheet
SAMSUNG ELECTRONICS
(58 views)
NT5CC512M4GN (Nanya)
2Gb DDR3 SDRAM G-Die
2Gb DDR3 SDRAM G-Die
NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN
Feature
VDD = VDDQ = 1.5V ± 0.075V(JEDEC Standard Power Supply)
VDD =
(37 views)
KLM4G1EEHM-B101 (Samsung)
(KLMxGxxEHx) moviNAND
KLMxGxxEHx
Preliminary
SAMSUNG moviNANDTM
KLMxGxxEHx (FN3x based moviNAND)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS
(37 views)
NT5TU256M4GE (Nanya)
1Gb DDR2 SDRAM
NT5TU256M4GE / NT5TU128M8GE / NT5TU64M16GG
1Gb DDR2 SDRAM
Feature
CAS Latency Frequency
DDR2-667 Speed Sorts (CL-tRCD-tRP) Parameter Max. Clock Freq
(32 views)
MT4LC16M4G3 (Micron Technology)
DRAM
16 MEG x 4 EDO DRAM
DRAM
FEATURES
• Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions, and packages • 12 row, 12 colum
(31 views)
KLM4G1FE3B-B001 (Samsung)
e.MMC
Rev. 1.0, Oct. 2011
KLMxGxFE3B-x00x
Samsung e·MMC Product family
e.MMC 4.41 Specification compatibility
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIG
(31 views)
NT5CB512M4GN (Nanya)
2Gb DDR3 SDRAM G-Die
2Gb DDR3 SDRAM G-Die
NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN
Feature
VDD = VDDQ = 1.5V ± 0.075V(JEDEC Standard Power Supply)
VDD =
(30 views)
KLM4G1YE4C-B001 (Samsung)
embedded MMC solution
SAMSUNG CONFIDENTIAL Rev. 1.1, Jul. 2012
KLMxGxxE4x-x001
Samsung e·MMC Product family
e.MMC 4.41 Specification compatibility
datasheet
SAMSUNG ELECTRO
(29 views)
THGBM4G6D2HBAIR (Toshiba)
8GB e-MMC Module
Preliminary THGBM4G6D2HBAIR
8GB THGBM4G6D2HBAIR
TOSHIBA e-MMC Module
INTRODUCTION
THGBM4G6D2HBAIR is 8-GByte density of e-MMC Module product house
(28 views)
CT1210M4G (EPCOS)
Multilayer technology
www.DataSheet4U.com
SMD Varistors
MLV; Standard Series
Construction
I Multilayer technology I Termination: nickel barrier (CT series) or silver pal
(27 views)
M4G (Tyco Electronics)
Double-Balanced Mixer
M4G / SM4G
Double-Balanced Mixer
Features
• LO 800 TO 3500 MHz • RF 800 TO 2400 MHz • IF DC TO 1500 MHz • LO DRIVE: +7 dBm (NOMINAL) • HIGH ISOLATIO
(26 views)
HMF8M8M4G (Hanbit Electronics)
FLASH-ROM MODULE
HANBit
HMF8M8M4G
FLASH-ROM MODULE 8MByte (8M x 8-Bit) Part No. HMF8M8M4G GENERAL DESCRIPTION
The HMF8M8M4G is a high-speed flash read only memory (F
(26 views)
KLM4G1YEMD-B031 (Samsung)
eMMC
SAMSUNG CONFIDENTIAL
Rev. 1.0 Aug. 2013
KLMxGxxEMx-B031
Samsung e·MMC Product family
e.MMC 5.0 Specification compatibility
datasheet
SAMSUNG ELECTRONI
(26 views)
CT1206M4G (EPCOS)
Multilayer technology
www.DataSheet4U.com
SMD Varistors
MLV; Standard Series
Construction
I Multilayer technology I Termination: nickel barrier (CT series) or silver pal
(25 views)
HMF2M32M4GL (Hanbit Electronics)
FLASH-ROM MODULE
HANBit
HMF2M32M4GL
FLASH-ROM MODULE 8MByte (2M x 32-Bit), 72pin-SIMM, 5V Part No. HMF2M32M4GL GENERAL DESCRIPTION
The HMF2M32M4GL is a high-speed fl
(24 views)
M4Gx (EDAL)
MEDIUM CURRENT SILICON RECTIFIERS
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U DataSheet4U.com
(22 views)
HMS12832M4G (Hanbit Electronics)
SRAM
HANBit
HMS12832M4G/Z4
SRAM MODULE 512KByte (128K x 32-Bit), 64PIN SIMM / ZIP
Part No. HMS12832M4G, HMS12832Z4
GENERAL DESCRIPTION
The HMS12832M4G/Z4
(22 views)
HMD8M32M4G (Hanbit Electronics)
32Mbyte(8Mx32) 72-pin SIMM
HANBit
HMD8M32M4G
32Mbyte(8Mx32) 72-pin SIMM, FP Mode, 4K Ref. 5V Part No. HMD8M32M4, HMD8M32M4G
GENERAL DESCRIPTION
The HMD8M32M4 is a 8M x 32bit
(22 views)
THGBM4G5D1HBAIR (Toshiba)
4GB e-MMC Module
THGBM4G5D1HBAIR
TOSHIBA e-MMC Module
4GB THGBM4G5D1HBAIR INTRODUCTION
THGBM4G5D1HBAIR is 4-GByte density of e-MMC Module product housed in 153 ball BG
(20 views)