M4G Datasheet | Specifications & PDF Download

SAMSUNG CONFIDENTIAL Rev. 1.0, Dec. 2014 KLM4G1FEPD-B031 Samsung eMMC Product family eMMC 5.0 Specification compatibility datasheet SAMSUNG ELECTRONIC

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SAMSUNG CONFIDENTIAL Rev1.0. Feb. 2018 KLM4G1FETE-B041 Samsung eMMC Product family eMMC 5.1 Specification compatibility datasheet SAMSUNG ELECTRONICS

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KLMxGxxEHx Preliminary SAMSUNG moviNANDTM KLMxGxxEHx (FN3x based moviNAND) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS

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www.DataSheet4U.com SMD Varistors MLV; Standard Series Construction I Multilayer technology I Termination: nickel barrier (CT series) or silver pal

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www.DataSheet4U.com SMD Varistors MLV; Standard Series Construction I Multilayer technology I Termination: nickel barrier (CT series) or silver pal

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SAMSUNG CONFIDENTIAL Rev. 1.0 Aug. 2013 KLMxGxxEMx-B031 Samsung e·MMC Product family e.MMC 5.0 Specification compatibility datasheet SAMSUNG ELECTRONI

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SAMSUNG CONFIDENTIAL Rev. 1.1, Jul. 2012 KLMxGxxE4x-x001 Samsung e·MMC Product family e.MMC 4.41 Specification compatibility datasheet SAMSUNG ELECTRO

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Rev. 1.0, Oct. 2011 KLMxGxFE3B-x00x Samsung e·MMC Product family e.MMC 4.41 Specification compatibility datasheet SAMSUNG ELECTRONICS RESERVES THE RIG

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2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V(JEDEC Standard Power Supply)  VDD =

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HANBit HMF8M8M4G FLASH-ROM MODULE 8MByte (8M x 8-Bit) Part No. HMF8M8M4G GENERAL DESCRIPTION The HMF8M8M4G is a high-speed flash read only memory (F

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HANBit HMD8M32M4G 32Mbyte(8Mx32) 72-pin SIMM, FP Mode, 4K Ref. 5V Part No. HMD8M32M4, HMD8M32M4G GENERAL DESCRIPTION The HMD8M32M4 is a 8M x 32bit

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HANBit HMF2M32M4GL FLASH-ROM MODULE 8MByte (2M x 32-Bit), 72pin-SIMM, 5V Part No. HMF2M32M4GL GENERAL DESCRIPTION The HMF2M32M4GL is a high-speed fl

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HANBit HMS12832M4G/Z4 SRAM MODULE 512KByte (128K x 32-Bit), 64PIN SIMM / ZIP Part No. HMS12832M4G, HMS12832Z4 GENERAL DESCRIPTION The HMS12832M4G/Z4

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Preliminary THGBM4G6D2HBAIR 8GB THGBM4G6D2HBAIR TOSHIBA e-MMC Module INTRODUCTION THGBM4G6D2HBAIR is 8-GByte density of e-MMC Module product house

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2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V(JEDEC Standard Power Supply)  VDD =

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www.DataSheet4U.com SMD Varistors MLV; Standard Series Construction I Multilayer technology I Termination: nickel barrier (CT series) or silver pal

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NT5TU256M4GE / NT5TU128M8GE / NT5TU64M16GG 1Gb DDR2 SDRAM Feature CAS Latency Frequency DDR2-667 Speed Sorts (CL-tRCD-tRP) Parameter Max. Clock Freq

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HANBit HMF1M32M4GL FLASH-ROM MODULE 4MByte (1M x 32-Bit),72pin-SIMM, 5V Part No. HMF1M32M4GL GENERAL DESCRIPTION The HMF1M32M4GL is a high-speed fl

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HANBit HMF51232M4G FLASH-ROM MODULE 2MByte (512K x 32-Bit) Part No. HMF51232M4G GENERAL DESCRIPTION The HMF51232M4G is a high-speed flash read only

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THGBM4G5D1HBAIR TOSHIBA e-MMC Module 4GB THGBM4G5D1HBAIR INTRODUCTION THGBM4G5D1HBAIR is 4-GByte density of e-MMC Module product housed in 153 ball BG

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