MJ-11 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJL21193 www.datasheet4u.com DESCRIPTION ·With TO-3PL package ·Complem

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJL21194 www.datasheet4u.com DESCRIPTION ·With TO-3PL package ·Complem

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MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designe

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MJ21193 - PNP MJ21194 - NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically

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Power Transistor 80 V, 8 A General Purpose NPN MJK44H11 Designed for general purpose power and switching applications such as regulators, converters

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Power Transistor 80 V, 8 A General Purpose PNP MJK45H11 Designed for general purpose power and switching applications such as regulators, converters

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MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in

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MJD44H11, MJD45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-2

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJL21194G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High

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SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE PLASTIC MATERIAL USED CARRIES UL 94V-0 Marking Zener Voltage VZ (V) @ IZT Min Nom Max Test cur

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MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary Power Transistors D2PAK for Surface Mount Complementary power trans

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MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary Power Transistors D2PAK for Surface Mount Complementary power trans

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Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = -8A,VCE=-5V ·Collector-Emitter Saturation

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MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C •

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MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in

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MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications . . . for general purpose power am

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emit

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MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designe

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MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with

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