MJ11012 - High-Current Complementary Silicon NPN Transistors

ON Semiconductor

Datasheet Details

Part number	MJ11012
Manufacturer	ON Semiconductor
File Size	103.53 KB
Description	High-Current Complementary Silicon NPN Transistors
Datasheet	MJ11012 Datasheet
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MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to + 200_C MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO Vdc MJ11012 60 MJ11015/6 120 Collector−Base Voltage VCB Vdc MJ11012 60 MJ11015/6 120 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C @ TC = 100°C Operating Storage Junction Temperature Range VEB IC IB PD TJ, Tstg 5 30 1 200 1.

Published: Mar 26, 2005 |