MJD350 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·Low Collector Saturation Voltage- : VC

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MJD340 ® MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s MEDIUM VOLTAGE

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SMD Type Transistors PNP Epitaxial Silicon Transistor MJD350 Features Load Formed for Surface Mount Application Straight Lead +9.70 0.2 -0.2 TO-2

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MJD350 MJD350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straigh

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MJD350 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features 。 High voltage.

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High Voltage Power Transistors DPAK for Surface Mount Applications MJD340 (NPN), MJD350 (PNP) Designed for line operated audio output amplifier, switc

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD340/D High Voltage Power Transistors DPAK For Surface Mount Applications • • • • •

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SMD High Voltage Transistor (PNP) MJD350 SMD High Voltage Transistor (PNP) Features • Designed for line operated audio output amplifier, Switchmode p

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NEW PRODUCT MJD350 HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • High Collector-EmitterVoltage • Ideally

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MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK for Surface Mount Applications Designed for line operated

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