MMBT3906-G Datasheet | Specifications & PDF Download

General Purpose Transistors NPN and PNP Silicon MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP These transistors are de

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General Purpose Transistors NPN and PNP Silicon MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP These transistors are de

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General Purpose Transistor PNP Silicon MMBT3906L, SMMBT3906L Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Cont

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.007(.20)MIN .103(2.60) .086(2.20) UPM MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage Range 40 Volts Power 150 Watts Features * PNP epi

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Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT3904 • Totally Lead-Fr

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® MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type MMBT3906 s Marking 36 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-2

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MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Con

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MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Con

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General Purpose Transistor PNP Silicon MMBT3906L, SMMBT3906L Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Cont

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SMD Type PNP Transistors MMBT3906 (KMBT3906) Transistors SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.22.8 -0.1 Fea

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MMBT3906 Silicon PNP SMD triode 1˖base 2˖emitter 3˖collector encapsulation mode˖SOT-23 Classification of hFE˄1˅ Rank L H Range 100-200 200-30

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Elektronische Bauelemente MMBT3906Z -200 mA, -40 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and

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GSTMMBT3906 PNP General Purpose Transistor Product Description This device is designed as a general purpose amplifier and switch. Features Lead(Pb)-

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Small Signal Product MMBT3906L Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface devic

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3906LT1/D General Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3906LT1

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MMBT3906W SOT-323 Plastic-Encapsulate Transistors Features SOT-323 z Complementary to MMBT3904W z Power Dissipation of 200mW z High Stability an

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is desi

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UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Compl

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General Purpose Transistor PNP Silicon M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Curren

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RoHS MMBT3906LT1 SOT-23 TRANSISTOR Dimensions(Unit:mm) SOT-23 GENERAL PURPOSE TRANSISTOR Complementary Pair with MMBT3904LT1. DCollector Dissipati

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