MOS-BJT Datasheet | Specifications & PDF Download

NUS3116MT Main Switch Power MOSFET and Dual Charging BJT −12 V, −6.2 A, Single P−Channel with Dual PNP low Vce(sat) Transistors, 3x3 mm WDFN Package

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Small Signal BJT and MOSFET 30 V, 500 mA, PNP BJT with 20 V, 224 mA, N−Channel MOSFET NSM3005NZ Features • These Devices are Pb−Free, Halogen Free/BF

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CYStech Electronics Corp. Spec. No. : C196G6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT

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NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Pa

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SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a ne

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CYStech Electronics Corp. Spec. No. : C197G6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT

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SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a

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