MOSFET-Schottky Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD- 91789 PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Techno

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PD- 94101A IRF7342D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applica

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WPM2005B Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design

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PD 9.1608C IRL3103D1 FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Copackaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic

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HEXFET® Power MOSFET plus Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky D

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PD- 95299 IRF7342D2PbF Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schot

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FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode November 2006 FDFS2P753Z tm Integrated P-Channel PowerTrench® MOSFET and Scho

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PD- 91667D IRF7321D2 FETKY MOSFET & Schottky Diode l l l l l l TM Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Appli

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PD- 95160A IRF5803D2PbF l l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low

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PD-95291 IRF7807VD2PbF FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifier

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PD -95437 IRF7526D1PbF l Co-packaged HEXFET® Power MOSFET and Schottky Diode l P-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technolog

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-08L-B Power Management MOSFETs-Schottky CJ5853DC P-channel MOSFET and Schottky Barrier Di

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www.DataSheet.co.kr Ordering number : ENN8287 VEC2811 VEC2811 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General

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FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P859T –20 V, –3.0 A, 120 m: Features MOSFET: „ Max rDS(on) = 120 m: at

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MOSFET – Power, Single, P-Channel, Schottky Diode, Schottky Barrier Diode -30 V, -4.0 A, 20 V, 2.2 A NTMD4184PF Features  FETKYt Surface Mount Pack

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WPM2005 WPM2005 Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circu

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FDFS2P106A June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P106A combines the exce

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FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P853 July 2014 Integrated P-Channel PowerTrench® MOSFET and Schottky D

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BF9024SPD-M BYD Microelectronics Co., Ltd P-Channel MOSFET and Schottky Diode General Description The BF9024SPD-M uses advanced trench technology to

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www.DataSheet.co.kr Ordering number : EN9078 VEC2801 SANYO Semiconductors DATA SHEET VEC2801 Features • • MOSFET : P-Channel Silicon MOSFET SBD

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