IRF5803D2PbF Datasheet, Diode, International Rectifier

IRF5803D2PbF Features

• Diode °C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF5803D2PbF Schottky Diode Characteristics 100 100 T J = 150°C Reve

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IRF5803D2PbF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet & schottky diode. The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switch

IRF5803D2PbF Application

• Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 TM K K D D VDSS = -4

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IRF5803D2PbF

International Rectifier

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