Datasheet4U Logo Datasheet4U.com

IRF5803D2PbF - Power MOSFET & Schottky Diode

IRF5803D2PbF Description

PD- 95160A IRF5803D2PbF l l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low .
The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and.

IRF5803D2PbF Features

* t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (°C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 °C/W DC see note (4) Square wave ( D = 0.50) 80 % Rated V R applied Average Forwar

📥 Download Datasheet

Preview of IRF5803D2PbF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRF5803 - Power MOSFET (Infineon)
  • IRF50N06 - N-Channel MOSFET (YZPST)
  • IRF510 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF510A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF510S - Power MOSFET (Vishay)
  • IRF511 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF512 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF513 - N-Channel MOSFET Transistor (Inchange Semiconductor)

📌 All Tags

Power MOSFET Schottky Diode International Rectifier
International Rectifier IRF5803D2PbF-like datasheet

IRF5803D2PbF Stock/Price