IRF5803D2PbF

Power MOSFET & Schottky Diode

International Rectifier

IRF5803D2PbF Features

* t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (°C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 °C/W DC see note (4) Square wave ( D = 0.50) 80 % Rated V R applied Average Forwar

IRF5803D2PbF General Description

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this.

IRF5803D2PbF Datasheet (139.57 KB)

IRF5803D2PbF Datasheet Preview — Preview of IRF5803D2PbF PDF

Datasheet Details

Part number:

IRF5803D2PbF

Manufacturer:

International Rectifier

File Size:

139.57 KB

Description:

Power mosfet & schottky diode.
PD- 95160A IRF5803D2PbF l l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low .

📁 Related Datasheet

IRF5803D2 FETKY MOSFET (International Rectifier)

IRF5803 Power MOSFET (Infineon)

IRF5803 Power MOSFET (International Rectifier)

IRF5803PbF Power MOSFET (International Rectifier)

IRF5803PbF Power MOSFET (Infineon)

IRF5800 Power MOSFET (International Rectifier)

IRF5800PBF Power MOSFET (International Rectifier)

IRF5801 Power MOSFET (International Rectifier)

IRF5801PbF Power MOSFET (International Rectifier)

IRF5801PBF-1 Power MOSFET (International Rectifier)

TAGS

IRF5803D2PbF Power MOSFET Schottky Diode International Rectifier

Image Gallery

IRF5803D2PbF Features

IRF5803D2PbF General Description

Datasheet Details

File Size:

Description:

IRF5803D2PbF Distributor