Datasheet4U Logo Datasheet4U.com

IRF5803D2 - FETKY MOSFET

Datasheet Summary

Description

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications.

HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • k T J = P DM x ZthJA + TA 1 10 0.01 0.1 100  PDM t1 t2 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (°C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 °C/W DC see note (4) Square wave ( D = 0.50) 80 % Rated V R applied Average Forward Current - F(AV) I (A) Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current Note (4) Formula used: TC = TJ - (Pd + PdRE.

📥 Download Datasheet

Datasheet preview – IRF5803D2

📁 Similar Datasheet

  • IRF5803 - Power MOSFET (Infineon)
  • IRF5803PbF - Power MOSFET (Infineon)
  • IRF50N06 - N-Channel MOSFET (YZPST)
  • IRF510 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF510 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF510 - Power MOSFET (Vishay)
  • IRF510A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF510S - Power MOSFET (Vishay)
  • IRF511 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF511 - N-Channel Power MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD- 94016 IRF5803D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K K D D VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V 2 7 3 6 4 5 Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Published: |