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IRF5803D2

FETKY MOSFET

IRF5803D2 Features

* k T J = P DM x ZthJA + TA 1 10 0.01 0.1 100  PDM t1 t2 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (°C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 °C/W DC see

IRF5803D2 General Description

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this.

IRF5803D2 Datasheet (127.16 KB)

Preview of IRF5803D2 PDF

Datasheet Details

Part number:

IRF5803D2

Manufacturer:

International Rectifier

File Size:

127.16 KB

Description:

Fetky mosfet.
PD- 94016 IRF5803D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applic.

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IRF5803D2 FETKY MOSFET International Rectifier

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