IRF5803D2 Datasheet - International Rectifier

IRF5803D2 FETKY MOSFET

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this.

IRF5803D2 Features

* k T J = P DM x ZthJA + TA 1 10 0.01 0.1 100 PDM t1 t2 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (°C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 °C/W DC see

IRF5803D2 Datasheet (127.16 KB)