IRF5801PbF Datasheet - International Rectifier

IRF5801PbF Power MOSFET

PD-95474B SMPS MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free l Halogen-Free l IRF5801PbF HEXFET® Power MOSFET VDSS 200V RDS(on) max 2.2W ID 0.6A 9 9 B ! " % $ # 9 9 T TSOP-6 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°.

IRF5801PbF Features

* for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2010 8 www.irf.com

IRF5801PbF Datasheet (220.66 KB)