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IRF5801PBF-1 - Power MOSFET

IRF5801PBF-1 Description

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 200 2.20 3.9 0.6 V Ω nC A .

IRF5801PBF-1 Features

* Industry-standard pinout TSOP-6 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF5801PbF-1 HEXFET® Power MOSFET D1 D2 G3 6D 5D 4S TSOP-6 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier

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Power MOSFET International Rectifier
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