IRF5802 Datasheet (International Rectifier)

IRF5802, Power MOSFET

PD- 94086 SMPS MOSFET Applications l High frequency DC-DC converters IRF5802 HEXFET® Power MOSFET RDS(on) max 1.2Ω@VGS = 10V ID 0.9A VDSS 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Note AN1001) l Fully Characterized Avalanche Voltage and Current D 1 6 D D 2 5 D G 3 4 S TSOP-6 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/d