IRF5802 Datasheet, Mosfet, International Rectifier

IRF5802 Features

• Mosfet s while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 23mH RG = 25Ω, IAS = 0.54A.
• Pulse width ≤ 400µs; duty cycle ≤ 2%. † ISD ≤ 0.54A, di/dt ≤ 89A/µs, VDD ≤ V(

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IRF5802

Manufacturer:

International Rectifier

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127.59kb

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📄 Datasheet

Description:

Power mosfet.

IRF5802 Application

• Applications l High frequency DC-DC converters IRF5802 HEXFET® Power MOSFET RDS(on) max 1.2Ω@VGS = 10V ID 0.9A VDSS 150V Benefits l Low Gate to D

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IRF5802

International Rectifier

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