IRF7526D1PbF Datasheet, Diode, International Rectifier

IRF7526D1PbF Features

• Diode .5 3.0 Average Forward Current - I F(AV) (A) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7526D1PbF QGS VG QG QGD Charge Fig 15a. Basic Gate Char

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IRF7526D1PbF

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International Rectifier

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📄 Datasheet

Description:

Mosfet & schottky diode. FETKY TM MOSFET & Schottky Diode A1 A2 8K 7K VDSS = -30V S3 6 D RDS(on) = 0.20Ω G4 5D Schottky Vf = 0.39V Top View The FETK

IRF7526D1PbF Application

• Applications Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this te

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IRF7526D1PbF

International Rectifier

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