IRF7526D1PbF MOSFET & Schottky Diode

International Rectifier

Description

PD -95437 IRF7526D1PbF l Co-packaged HEXFET® Power MOSFET and Schottky Diode l P-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technolog.
FETKY TM MOSFET & Schottky Diode A1 A2 8K 7K VDSS = -30V S3 6 D RDS(on) = 0.

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Datasheet Specifications

Part number: IRF7526D1PbF
Manufacturer: International Rectifier
File Size: 142.20 KB
Datasheet: IRF7526D1PbF-InternationalRectifier.pdf
Description: MOSFET & Schottky Diode

Features

* ard Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% VDD ISD
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17 For P Channel HEXFETS 8 www. irf. com IRF7526D1PbF Micro8 Package Outline Dimens

Applications

* Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable

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IRF7526D1PbF MOSFET Schottky Diode International Rectifier

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