IRF7524D1PbF Datasheet - International Rectifier

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IRF7524D1PbF Power MOSFET

PD -95242 IRF7524D1PbF l Co-packaged HEXFET® Power MOSFET and Schottky Diode l P-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technolog.
FETKYTM MOSFET & Schottky Diode A1 A2 8K 7K VDSS = -20V S3 6 D RDS(on) = 0.

IRF7524D1PbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF7524D1PbF

Manufacturer:

International Rectifier

File Size:

162.25 KB

Description:

Power MOSFET

Features

* ( .167 ) ( .208 ) ( 0.65 .0256 ) 6X Micro8 Part Marking Information EXAMPLE: THIS IS AN IRF 7501 LOT CODE (XX) PART NUMBER DATE CODE (YW) - S ee table below Y = YEAR W = WEEK P = DES IGNATES LEAD - FREE PRODUCT (OPTIONAL) WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR Y WORK

Applications

* Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable

IRF7524D1PbF Distributors

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IRF7524D1PbF Power MOSFET International Rectifier

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