IRF7524D1PbF Datasheet, Mosfet, International Rectifier

IRF7524D1PbF Features

• Mosfet 0 80 D = 3/4 60 D = 1/2 D =1/3 40 D = 1/4 D = 1/5 20 DC 0A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Average Forward Current - I F(AV) (A) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forwar

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IRF7524D1PbF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. FETKYTM MOSFET & Schottky Diode A1 A2 8K 7K VDSS = -20V S3 6 D RDS(on) = 0.27Ω G4 5D Schottky Vf = 0.39V Top View The FETK

IRF7524D1PbF Application

• Applications Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this te

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IRF7524D1PbF

International Rectifier

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