IRF7521D1 Datasheet, Mosfet, International Rectifier

IRF7521D1 Features

  • Mosfet rd VVotage o lta ge D ro p
  • V (V ) Forward Drop V FM F ( V) Fig. 12 -Typical Forward Voltage Drop Characteristics A A v era ge Forw ard C urrent - I F(AV ) (A ) Fig.14 - Ma

PDF File Details

Part number:

IRF7521D1

Manufacturer:

International Rectifier

File Size:

177.92kb

Download:

📄 Datasheet

Description:

Fetky mosfet. T op V ie w The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solut

Datasheet Preview: IRF7521D1 📥 Download PDF (177.92kb)
Page 2 of IRF7521D1 Page 3 of IRF7521D1

IRF7521D1 Application

  • Applications Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this te

TAGS

IRF7521D1
FETKY
MOSFET
International Rectifier

📁 Related Datasheet

IRF7523D1 - FETKY MOSFET (International Rectifier)
PD- 91647C IRF7523D1 FETKY™ MOSFET / Schottky Diode q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky R.

IRF7524D1 - FETKY MOSFET (International Rectifier)
PD -91648C PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8T.

IRF7524D1PbF - Power MOSFET (International Rectifier)
PD -95242 IRF7524D1PbF l Co-packaged HEXFET® Power MOSFET and Schottky Diode l P-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technolog.

IRF7526D1 - FETKY MOSFET (International Rectifier)
PD -91649C IRF7526D1 FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky.

IRF7526D1PbF - MOSFET & Schottky Diode (International Rectifier)
PD -95437 IRF7526D1PbF l Co-packaged HEXFET® Power MOSFET and Schottky Diode l P-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technolog.

IRF750 - Advanced Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.

IRF7501 - Power MOSFET (International Rectifier)
PD - 91265H PRELIMINARY l l l l l l l IRF7501 HEXFET® Power MOSFET 8 7 Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very S.

IRF7501PBF - Power MOSFET (International Rectifier)
PD - 95345A IRF7501PbF HEXFET® Power MOSFET l l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC P.

IRF7503 - Power MOSFET (International Rectifier)
PD - 9.1266G IRF7503 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Packag.

IRF7503PBF - Power MOSFET (International Rectifier)
• Lead-Free PD- 95346 IRF7503PbF .irf. 1 02/22/05 IRF7503PbF 2 .irf. IRF7503PbF .irf. 3 IRF7503PbF 4 .irf. IRF7503PbF.

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 20V 2.4A MICRO8
DigiKey
IRF7521D1
0 In Stock
Qty : 95 units
Unit Price : $0.77
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts