Datasheet Specifications
- Part number
- IRF7523D1
- Manufacturer
- International Rectifier
- File Size
- 204.94 KB
- Datasheet
- IRF7523D1_InternationalRectifier.pdf
- Description
- FETKY MOSFET
Description
PD- 91647C IRF7523D1 FETKY™ MOSFET / Schottky Diode q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky R.
Features
* ARTERS: 233 Kansas St. , El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 7Applications
* Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portableIRF7523D1 Distributors
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