Datasheet Specifications
- Part number
- IRF7524D1
- Manufacturer
- International Rectifier
- File Size
- 151.08 KB
- Datasheet
- IRF7524D1_InternationalRectifier.pdf
- Description
- FETKY MOSFET
Description
PD -91648C PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8T.
Features
* 0 41 ) 8X 0.38 8X ( .015 ) 3.2 0 ( .126 ) 4.2 4 5.2 8 ( .167 ) ( .2 08 ) N O TE S : 1 DIME N S ION IN G A N D T O L E RA N C IN G P E R A N S I Y 1 4 .5M -1 9 8 2 . 2 CO N T R OL L IN G DIME N S ION : INC H . 3 DIME N S ION S D O N O T INC L U D E M O L D F L A S H . 0.65 6X ( .02 56 ) Part MarApplications
* Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portableIRF7524D1 Distributors
📁 Related Datasheet
📌 All Tags