MT600 Datasheet | Specifications & PDF Download

MT6008N5 60 80 8 6 80 60 MT6008N5 60 20 100 n 8 8.5 MT6008N5 6 MT6008N5 MT6008N5 MT6008N5 MT6008N5

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Product Summary BVDSS 60V RDS(ON) Max 3.1mΩ @ VGS = 10V 4.5mΩ @ VGS = 4.5V ID TC = +25°C 90A 85A DMT6004LPS Green 60V N-CHANNEL ENHANCEMENT MODE M

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DMT6005LFG Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 60V RDS(ON) Max 4.1mΩ @ VGS = 10V 6.3mΩ @ VGS = 6V 7mΩ @

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CRMT6004E1 () 600V 5A 3-phase Integrated Power Modules Description CRMT6004E1 is 3-phase Integrated Power Modules (IPM) designed for advanced appl

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Green DMT6005LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) Max 4.5mΩ @ VGS = 10V 6.5mΩ @ VGS = 4.5V

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 37.2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance

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ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT Green DMT6007LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 6mΩ @ VGS = 10V 8

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DMT6005LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 6mΩ @ VGS = 10V 8.9mΩ @ VGS = 4.5V ID Max TA = 25°C 13.5A 1

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ADAVDAVNACNECDE IDNIFNOFRORMAMTAITOINON DMT6009LK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 10mΩ @ VGS =

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Product Summary BVDSS 60V RDS(ON) Max 2mΩ @ VGS = 10V 3mΩ @ VGS = 6V ID Max TC = +25°C (Note 9) 100A 100A DMT6002LPS Green 60V N-CHANNEL ENHANCEME

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Green DMT6005LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 6mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V ID TC = +25°C 100

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VISHAY TEMT6000 Vishay Semiconductors Ambient Light Sensor Description TEMT6000 is a silicon NPN epitaxial planar phototransistor in a miniature tr

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ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT Product Summary V(BR)DSS 60V RDS(ON) Max 10mΩ @ VGS = 10V 11.7mΩ @ VGS = 4.5V ID Max TC = +25°C 34A 31.5A

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ADVANCE INNEFWORPRMOADTIUOCNT DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) max 9.5mΩ @ VGS = 10V 12mΩ @ VGS

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Product Summary DMT6004SPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Features BVDSS 60V RDS(ON) MAX 3.1mΩ @ VGS = 10V ID MAX TC =

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CRMT6002E1 () 600V 3A 3-phase Integrated Power Modules Description CRMT6002E1 is 3-phase Integrated Power Modules (IPM) designed for advanced appl

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isc N-Channel MOSFET Transistor DMT6004SCT FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On

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Product Summary BVDSS 60V RDS(ON) max 3.65mΩ @ VGS = 10V ID TC = +25°C (Note 9) 100A DMT6004SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features  1

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isc N-Channel MOSFET Transistor DMT6005LCT FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On

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