MTP3055 Datasheet | Specifications & PDF Download

® MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET™ MOSFET T YPE MTP3055E s s s s s V DSS 60 V R DS(on) < 0.15 Ω ID 12 A TYPICAL RDS(on) =

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MTP3055VL June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N-Channel

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® MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET™ MOSFET T YPE MTP3055E s s s s s V DSS 60 V R DS(on) < 0.15 Ω ID 12 A TYPICAL RDS(on) =

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DATA SHEET www.onsemi.com MOSFET – N-Channel, Field Effect Transistor, Enhancement Mode, Logic Level 60 V, 12 A, 0.18 W VDSS 60 V RDS(ON) MAX 0.18

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3055V/D TMOS Power Field Effect Transistor TMOS V is a new technology de

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/= T SGS THOMSON HD©[^©[i[L[l(gTF^(Q)R ]D©S MTP3055A MTP3055AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055A MTP3055AFI Voss

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MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and

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MTP3055V May 1999 MTP3055V N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel MOSFET has been designed specifical

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/= T SGS THOMSON HD©[^©[i[L[l(gTF^(Q)R ]D©S MTP3055A MTP3055AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055A MTP3055AFI Voss

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