Medium-Power Datasheet | Specifications & PDF Download

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD. SB2202 MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC SB2202 is a medium power low volta

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SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL – P89 7 FCX589 C E C ABSOLUTE MAXIMUM RA

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SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DET

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NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt ZTX656

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MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low

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2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

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SF5G42,SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42,SF5J42 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400

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A Product Line of Diodes Incorporated FCX491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features • BVCEO > 40V • IC = 1A high Continuou

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UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772 is a medium power lo

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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR6PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE CR6PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions

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BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are inten

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BCP56; BCX56; BC56PA 80 V, 1 A NPN medium power transistors Rev. 9 — 25 October 2011 Product data sheet 1. Product profile 1.1 General description

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PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−F

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BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description

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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN

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FMMT493A HIGH GAIN NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature  BVCEO > 60V  IC = 1A Continuous Collector Current  VCE(SAT)= 0.5V @1A  500mW Pow

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