MicroWave Datasheet | Pinout, Features, Price Comparison & PDF

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CL01-12 350mA 12kV High Voltage Microwave Oven Rectifiers Diodes -----------------------------------------------------------------------------------

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CL04-12 450mA 12kV High Voltage Microwave Oven Rectifiers Diodes -----------------------------------------------------------------------------------

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K-LC5 RADAR TRANSCEIVER Features  24 GHz short range transceiver  Beam aperture 80°/34°  Pin-compatible with K-LC2  150 MHz typical sweep rate  H

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Microwave Schottky Ring Quads FEATURES Low Inductance Leadless Rings High Fco High Temperature Tri-Metal E7 E3 M1 ENVIRONMENTAL RATINGS (Maximum)

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data sheet  K-L D 2 radar transceiver Features Applications Description Block Diagram –– Small and low cost digital 24 GHz radar motion detector –– D

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www.DataSheet4U.com RF AMPLIFIER MODEL TM7101 Features Low Noise Figure: 1.8 dB Typical High Gain: 27.5 dB Typical Operating Temp. - 55 ºC to

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v00.0301 MICROWAVE CORPORATION HMC342 GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz Features Noise Figure : 3.5 dB Gain: 20 dB Single Supply : +3V @ 36

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www.DataSheet4U.com Synthesized Signal Generator, 10 MHz to 20 GHz HMC-T2100 125790 Rev00.0409 Analog & Mixed-Signal ICs, Modules, Subsystems & Ins

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1051 www.datasheet4u.com RF & MICROWAVE TRANSISTORS HF

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Data Sheet Microwave Wideband Synthesizer with Integrated VCO ADF4355-3 FEATURES GENERAL DESCRIPTION RF output frequency range: 51.5625 MHz to 660

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www.DataSheet4U.com Aluminum Cased Connectorized Components Model 74129 Mixers Double Balanced Applications • Wideband Down Converters • Wideband Up

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Microwave Hybrid Junction 30 MHz - 3 GHz Features q q H-183-4 V2.00 C-11 0°–180° Hybrid Seven Octave Frequency Range Guaranteed Specifications* Di

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Microwave Schottky Ring Quads FEATURES Low Inductance Leadless Rings High Fco High Temperature Tri-Metal E7 E3 M1 ENVIRONMENTAL RATINGS (Maximum)

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H-183-4 Microwave Hybrid Junction, 30 MHz - 3 GHz Features  0o - 180o Hybrid  Seven Octave Frequency Range C-11 Rev. V2 Guaranteed Specifications

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DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSIS

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General Purpose Schottky Diodes FEATURES Fast switching-PSEC High breakdown voltage Low cost - H-P equivalents ENVIRONMENTAL RATINGS (Maximum) Operat

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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF3104/D The RF Line Microwave Linear Power Transistors • Designed for Class A, Common Emitter

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