MSN0880M (MORESEMI)
N-Channel Enhancement Mode Power MOS FET
MSN0880M
75V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ）
● Special process
(3 views)
MSN0650K (MORESEMI)
N-Channel Enhancement Mode Power MOS FET
MSN0650K
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V
● High density cell design fo
(3 views)
MSC4963W (MORESEMI)
Dual P-Channel Enhancement Mode Power MOS FET
MSC4963W
-20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @
(3 views)
MSC0207W (MORESEMI)
Dual P-Channel MOSFET
MSC0207W
-20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @
(3 views)
MSN15B5H (MORESEMI)
N-Channel MOSFET
MSN15B5H
150V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDSS =150V,ID =150A RDS(ON) < 8mΩ @ VGS=10V （Typ：6.6 mΩ）
● Good stabil
(3 views)
MSN06M2 (MORESEMI)
N-Channel MOSFET
MSN06M2
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
● Le
(3 views)
LN15 (Samsung semiconductor)
Single Jacket Non-Armored
Samsung Electronics Fiberoptics products
Loose Tube Cable - SJNA
Single Jacket Non-Armored
Description
SAMSUNG Single Jacket Non-Armored cables are l
(2 views)
MSP2305A (MORESEMI)
P-Channel Enhancement Mode Power MOSFET
MSP2305A
-12V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS
(2 views)
MSP0205 (MORESEMI)
P-Channel Enhancement Mode Power MOSFET
MSP0205
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4
(2 views)
MSP0205A (MORESEMI)
P-Channel Enhancement Mode Power MOSFET
MSP0205A
-12V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=
(2 views)
MSN3400 (MORESEMI)
30V(D-S) N-Channel Enhancement Mode Power MOS FET
MSN3400
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V
(2 views)
MSN2304 (MORESEMI)
N-Channel Enhancement Mode Power MOSFET
MSN2304
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V
●
(2 views)
MSN3402A (MORESEMI)
N-Channel Enhancement Mode Power MOSFET
MSN3402A
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5
(2 views)
MSN014WE (MORESEMI)
N-Channel Enhancement Mode Power MOSFET
MSN014WE
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD
(2 views)
MSN2300 (MORESEMI)
N-Channel Enhancement Mode Power MOSFET
MSN2300
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =4A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V
●
(2 views)
MSN2300A (MORESEMI)
N-Channel Enhancement Mode Power MOSFET
MSN2300A
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 5.8A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V
(2 views)
MSN2306 (MORESEMI)
N-Channel Enhancement Mode Power MOSFET
MSN2306
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V
(2 views)
MSP0315D (MORESEMI)
P-Channel Enhancement Mode Power MOSFET
MSP0315D
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-30V,ID =-15A RDS(ON) <54mΩ @ VGS=-10V RDS(ON) <82mΩ @ VGS=-4.5V
(2 views)
MSP0330D (MORESEMI)
P-Channel Enhancement Mode Power MOSFET
MSP0330D
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
(2 views)
MSP0405W (MORESEMI)
P-Channel Enhancement Mode Power MOSFET
MSP0405W
-40V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-40V,ID =-5.3A RDS(ON) <80mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.
(2 views)
