NE5 Datasheet | Specifications & PDF Download

LM555/NE555/SA555 Single Timer www.fairchildsemi.com Features • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stabilit

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community NA555, NE555, SA555, SE555 SLFS022I – SEPTEMBER 1973 – REVIS

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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NE555 PRECISION TIMER Description These devices are precision timing circuits capable of producing accurate time delays or oscillation. In the time-d

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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LM555/NE555/SA555 Single Timer www.fairchildsemi.com Features • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stabilit

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UNISONIC TECHNOLOGIES CO., LTD NE555 LINEAR INTEGRATED CIRCUIT SINGLE TIMER  DESCRIPTION The UTC NE555 is a highly stable timer integrated circui

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www.DataSheet4U.com ISSUED DATE :2005/08/10 REVISED DATE :2006/05/15C GSCNE555 SINGLE TIMER Description The GSCNE555 is a highly stable timer inte

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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NA555, NE555, SA555, SE555 SLFS022J – SEPTEMBER 1973 – REVISED FEBRUARY 2025 xx555 Precision Timers 1 Features • Timing from microseconds to hours •

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3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ =

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5

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DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The

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