NEO-6P Datasheet | Specifications & PDF Download

Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Con

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6EDL04 family 6EDL04x06xT and 6EDL04N02PR family 200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and I

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SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead plating

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2EDL05 family 2EDL05x06xx family 600 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology •

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Final data SPD09P06PL SPU09P06PL Product Summary VDS RDS(on) ID P-TO251-3-1 Feature SIPMOS =Power-Transistor P-Channel Enhancement mode Log

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6EDL04 family 6EDL04x06xT and 6EDL04N02PR family 200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and I

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Sanftanlauf-Modul Soft Starter Module Key Parameters VDRM / VRRM Ioverload(21s) ITSM VT0 rT RthJA (21s) 1600 V 2180 A 21000 A 0,9 V 0,24 mΩ 0,082 K/

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SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode / Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Footp

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2EDL05 family 2EDL05x06xx family 600 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology •

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2EDL05 family 2EDL05x06xx family 600 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology •

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Neotec Semiconductor Ltd. NT7086PQ LCD Driver Version 1.0 INTRODUCTION The NT7086PQ is a LCD driver LSI that is fabricated by low power CMOS high v

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HybridPACK™ Drive Module FS820R08A6P2LB Final Data Sheet V3.4, 2019-10-09 Automotive High Power FS820R08A6P2LB HybridPACK™ Drive Module 1 Featur

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2EDL23 family 2EDL23x06PJ family 600 V Half Bridge Gate Driver with OCP and Integrated Bootstrap Diode Features  Infineon thin-film-SOI-technology

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2EDL23 family 2EDL23x06PJ family 600 V Half Bridge Gate Driver with OCP and Integrated Bootstrap Diode Features  Infineon thin-film-SOI-technology

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SPP08P06P H SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage

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2EDL05 family 2EDL05x06xx family 600 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology •

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Sanftanlauf-Modul Soft Starter Module Key Parameters VDRM / VRRM Ioverload(21s) ITSM VT0 rT RthJA (21s) 1600 V 1300 A 10500 A 0,9 V 0,49 mΩ 0,118 K/

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Sanftanlauf-Modul Soft starter Module Key Parameters VDRM / VRRM Ioverload(21s) ITSM VT0 rT RthJA (21s) 1600 V 800 A 6300 A 0,9 V 0,83 mΩ 0,196 K/W

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IPD06P004N MOSFET OptiMOSTM Power Transistor, -60 V Features • P-Channel • Very low on-resistance RDS(on) • 100% avalanche tested • Normal Level • En

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HybridPACK™ Drive Module FS950R08A6P2LB Final Data Sheet V3.0, 2020-03-23 Automotive High Power FS950R08A6P2LB HybridPACK™ Drive Module 1 Featur

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