NF-BF-10 Datasheet | Specifications & PDF Download

IRFR3710ZPbF Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche A

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IRLR3410PbF IRLU3410PbF Features • Logic Level Gate Drive • Ultra Low On-Resistance • Surface Mount (IRLR3410) • Straight Lead (IRLU3410) • Advances

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IRLR3410PbF IRLU3410PbF Features • Logic Level Gate Drive • Ultra Low On-Resistance • Surface Mount (IRLR3410) • Straight Lead (IRLU3410) • Advances

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Public IRFP4468PbF Final datasheet MOSFET StrongIRFET™ Power MOSFET, 100 V Features • High Efficiency Synchronous Rectification in SMPS • Uninterrup

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Public IRFPW4468PbF Final datasheet MOSFET StrongIRFET™ Power MOSFET, 100 V Features • High Efficiency Synchronous Rectification in SMPS • Uninterru

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Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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CMOS Digital Integrated Circuit Silicon Monolithic TMPM3H Group(2) General Description ● Arm® Cortex®-M3 core Operating frequency: 1 to 120 MHz Opetat

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BF1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing

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General Description The PVI Series Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a DC input signal. It is capabl

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing

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Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell

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BFP410 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP410 is a low noise device based on a grounded emitter (SI

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IRLI2910PbF  Logic –Level Gate Drive  Advanced Process Technology  Ultra Low On-Resistance  Isolated Package  High Voltage Isolation = 2.5KVRMS

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

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General Description The PVI Series Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a DC input signal. It is capabl

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 Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated 

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 Surface Mount  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  Fast Switching  Fully Avalanche Rated  Lead-Free De

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BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing

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