NF-BF-10 Datasheet | Specifications & PDF Download

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

Rating: 1 ★ (6 votes)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

Rating: 1 ★ (6 votes)

BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing

Rating: 1 ★ (6 votes)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

Rating: 1 ★ (5 votes)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

Rating: 1 ★ (5 votes)

BF1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasin

Rating: 1 ★ (4 votes)

BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing

Rating: 1 ★ (4 votes)

Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell

Rating: 1 ★ (4 votes)

BF1009SW Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled 3 4 input stages up to 1GHz
Operating voltage 9V
Integrated bias

Rating: 1 ★ (4 votes)

 Surface Mount  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  Fast Switching  Fully Avalanche Rated  Lead-Free De

Rating: 1 ★ (3 votes)

BF1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing

Rating: 1 ★ (3 votes)

Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High

Rating: 1 ★ (3 votes)

Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell

Rating: 1 ★ (3 votes)

BFP410 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP410 is a low noise device based on a grounded emitter (SI

Rating: 1 ★ (3 votes)

CMOS Digital Integrated Circuit Silicon Monolithic TMPM3H Group(2) General Description ● Arm® Cortex®-M3 core Operating frequency: 1 to 120 MHz Opetat

Rating: 1 ★ (3 votes)

Public IRFPW4468PbF Final datasheet MOSFET StrongIRFET™ Power MOSFET, 100 V Features • High Efficiency Synchronous Rectification in SMPS • Uninterru

Rating: 1 ★ (3 votes)

Public IRFP4468PbF Final datasheet MOSFET StrongIRFET™ Power MOSFET, 100 V Features • High Efficiency Synchronous Rectification in SMPS • Uninterrup

Rating: 1 ★ (3 votes)

  Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to

Rating: 1 ★ (2 votes)

  Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to

Rating: 1 ★ (2 votes)

Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell

Rating: 1 ★ (2 votes)