Adaptenuators 50Ω, 3,6,10 dB, Features • • .
Infineon
IRFI1310NPBF - Power MOSFET
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated .
Infineon
IRFL4105PBF - Power MOSFET
Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free De.
Infineon
IRFR3710ZPbF - Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to.
Infineon
IRFU3710ZPbF - Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to.
Infineon
IRFU3710Z-701PbF - Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to.
Infineon
BFP410 - Low Noise Silicon Bipolar RF Transistor
BFP410 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP410 is a low noise device based on a grounded emitter (SI.
Infineon
IRFI4110GPbF - Power MOSFET
Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High .
Infineon
IRS10752LPBF - SOT-23 High-Side Gate Driver
IRS10752LPBF µHVICTM SOT-23 High-Side Gate Driver IC Features Description • Floating gate driver designed for bootstrap operation • Fully operati.
Infineon Technologies AG
BF1005 - Silicon N-Channel MOSFET Tetrode
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • .
Infineon Technologies AG
BF1005R - Silicon N-Channel MOSFET Tetrode
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • .
Infineon Technologies AG
BF1005S - Silicon N-Channel MOSFET Tetrode
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •.
Infineon Technologies AG
BF1005SR - Silicon N-Channel MOSFET Tetrode
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •.
Infineon Technologies AG
BF1005SW - Silicon N-Channel MOSFET Tetrode
BF1005S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasin.
Infineon Technologies AG
BF1005W - Silicon N-Channel MOSFET Tetrode
BF1005... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing .
Infineon Technologies AG
BF1009S - Silicon N-Channel MOSFET Tetrode
BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing.
Infineon Technologies AG
BF1009SR - Silicon N-Channel MOSFET Tetrode
BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing.
Infineon Technologies AG
BFR106 - Low Noise Silicon Bipolar RF Transistor
Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF .
Infineon
IRFI4410ZPBF - Power MOSFET
Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and Hig.
Mini-Circuits
NF-BF-10 - 50OHM / 3 /6 /10 dB / DC to 2000 MHz Adaptenuators
Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell.
Mini-Circuits
NF-BF-3 - 50OHM / 3 /6 /10 dB / DC to 2000 MHz Adaptenuators
Adaptenuators 50Ω, 3,6,10 dB, Features • • • • • improved interface matching wideband, DC-2000 MHz, useable to 4 GHz excellent VSWR, 1.1:1 typ. excell.
