NJW0281G (ON Semiconductor)
NPN-PNP Power Bipolar Transistors
NJW0281G (NPN) NJW0302G (PNP)
Complementary NPN-PNP Power Bipolar Transistors
These complementary devices are lower power versions of the popular NJ
(174 views)
NJW0281G (Inchange Semiconductor)
Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
NJW0281G
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Comple
(81 views)
NJW21193G (ON Semiconductor)
Silicon Power Transistors
NJW21193G (PNP) NJW21194G (NPN)
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically desi
(50 views)
NJT4030P (ON Semiconductor)
Bipolar Power Transistors PNP Silicon
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NJT4030P
Preferred Device
Product Preview Bipolar Power Transistors
PNP Silicon
Features http://onsemi.com
• Collector −Emitter
(45 views)
NJW0302G (ON Semiconductor)
NPN-PNP Power Bipolar Transistors
NJW0281G (NPN) NJW0302G (PNP)
Complementary NPN-PNP Power Bipolar Transistors
These complementary devices are lower power versions of the popular NJ
(40 views)
NJVMJB41CT4G (ON Semiconductor)
Complementary Silicon Plastic Power Transistors
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
Complementary Silicon Plastic Power Transistors
D2PAK for Surface Mount
Features
• Lead Formed
(39 views)
NJW21194G (ON Semiconductor)
Silicon Power Transistors
NJW21193G (PNP) NJW21194G (NPN)
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically desi
(38 views)
NJL3281D (ON Semiconductor)
Complementary ThermalTrak Transistors
NJL3281D (NPN) NJL1302D (PNP) Product Preview Complementary ThermalTrak™ Transistors
The ThermalTrak family of devices has been designed to eliminate
(37 views)
NJD2873 (ON Semiconductor)
Power Transistors
NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applications.
Features
(37 views)
LNJ806R58RW (Panasonic Semiconductor)
InGaAIP S-GW Type
Ultra Hight Bright Surface Mounting Chip
InGaAIP S-GW Type
LED
0.5 ± 0.1
1.7
Unit: mm
0.3 ± 0.1
2.9
LNJ416K54RW ········· LNJ416K54RW ········ Amb
(36 views)
NJVMJD127 (ON Semiconductor)
Complementary Darlington Power Transistor
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
Complementary Darlington Power Transistor
DPAK For Surface Mount Applications
Designed for general p
(36 views)
NJVNJD2873 (ON Semiconductor)
Power Transistors
NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applications.
Features
(36 views)
NJVMJD122 (ON Semiconductor)
Complementary Darlington Power Transistor
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
Complementary Darlington Power Transistor
DPAK For Surface Mount Applications
Designed for general p
(35 views)
NJ88C50 (Zarlink Semiconductor)
Dual Low Power Frequency Synthesiser
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NJ88C50
Dual Low Power Frequency Synthesiser
DS3805
ISSUE 1.8
June 2002
The NJ88C50 is a low power integrated circuit, design
(35 views)
NJL0281D (ON Semiconductor)
Complementary ThermalTrak Transistors
NJL0281D (NPN) NJL0302D (PNP) Complementary ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate thermal equilibr
(35 views)
NJD1718 (ON Semiconductor)
Power Transistors
NJD1718, NJVNJD1718
Power Transistors
PNP Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier and power switching appl
(35 views)
NJD2873 (Inchange Semiconductor)
Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
NJD2873
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current
(35 views)
NJL0302D (ON Semiconductor)
Complementary ThermalTrak Transistors
NJL0281D (NPN) NJL0302D (PNP) Complementary ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate thermal equilibr
(34 views)
LNJ210C6RRA (Panasonic Semiconductor)
Surface Mounting Chip LED
Light Emitting Diodes
LNJ210C6RRA
Surface Mounting Chip LED
Side View Type
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Power dissipatio
(33 views)
LNJ311G8TRA (Panasonic Semiconductor)
Surface Mounting Chip LED
Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ311G8TRA
Surface Mounting Chip LED
3216 Type
Forward curre
(33 views)