Naina Semiconductor Ltd. Press Fit Triac ½”, 30.
Naina Semiconductor
6
NPT30 - Press Fit Triac
Naina Semiconductor Ltd. Press Fit Triac ½”, 30 Amps Features • Improved glass passivation for high reliability • Exceptional stability at high temper.
IXYS
3
IXEH25N120D1 - NPT3 IGBT
IXEH 25N120 IXEH 25N120D1 www.DataSheet4U.com NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C TO-247 AD G G E E G C E C (TAB) .
IXYS Corporation
2
FII30-12E - NPT3 IGBT
www.DataSheet4U.com FII 30-12E NPT3 IGBT Phaseleg Topology in ISOPLUS i4-PACTM 3 5 4 IC25 = 33 A = 1200 V VCES VCE(sat) typ = 2.4 V 1 1 2 5 IGBT.
IXYS Corporation
2
IXEN60N120 - NPT3 IGBT in miniBLOC package
IXEN 60N120 IXEN 60N120D1 www.DataSheet4U.com NPT3 IGBT in miniBLOC package IC25 = 100 A = 1200 V VCES VCE(sat) typ. = 2.1 V C G G C miniBLOC, SOT-.
IXYS Corporation
2
IXER60N120 - NPT3 IGBT
Advanced Technical Information www.DataSheet4U.com NPT3 IGBT in ISOPLUS 247TM IXER 60N120 IC25 VCES VCE(sat) typ. C G = 95 A = 1200 V = 2.1 V ISOP.
IXYS
2
IXEH25N120 - NPT3 IGBT
IXEH 25N120 IXEH 25N120D1 www.DataSheet4U.com NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C TO-247 AD G G E E G C E C (TAB) .
IXYS Corporation
1
IXEH40N120 - NPT3 IGBT
IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C.
IXYS Corporation
1
IXEH40N120D1 - NPT3 IGBT
IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C.
IXYS Corporation
1
IXEN60N120D1 - NPT3 IGBT in miniBLOC package
IXEN 60N120 IXEN 60N120D1 www.DataSheet4U.com NPT3 IGBT in miniBLOC package IC25 = 100 A = 1200 V VCES VCE(sat) typ. = 2.1 V C G G C miniBLOC, SOT-.
IXYS Corporation
1
IXER35N120D1 - NPT3 IGBT with Diode
Advanced Technical Information www.DataSheet4U.com NPT3 IGBT with Diode in ISOPLUS 247TM IXER 35N120D1 IC25 VCES VCE(sat) typ. C G = 50 A = 1200 V .