IXEN 60N120 IXEN 60N120D1 www.DataSheet4U.com NPT3 IGBT in miniBLOC package IC25 = 100 A = 1200 V VCES VCE(sat) typ.
= 2.1 V C G G C miniBLOC, SOT-227 B E153432 G E E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter E C Either Emitter terminal can be used as Main or Kelvin Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V
IXEN60N120D1 Features
* NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits
* optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current
IXEN60N120_IXYSCorporation.pdf
Datasheet Details
IXEN60N120D1, IXEN60N120
IXYS Corporation
118.78 KB
Npt3 igbt in minibloc package.
This datasheet PDF includes multiple part numbers: IXEN60N120D1, IXEN60N120.
Please refer to the document for exact specifications by model.
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