IXER20N120 Datasheet - IXYS

IXER20N120 IGBT

NPT3 IGBT in ISOPLUS247™ IXER 20N120 IXER 20N120D1 IC25 = 36 A VCES = 1200 V V = CE(sat)typ 2.4 V C C ISOPLUS247™ G G E IXER 20N120 E IXER 20N120D1 G C E G = Gate Isolated Backside C = Collector E = Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 W; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 68 W TVJ = 125°C; non-repetitive TC = 25°C Maximum Rating.

IXER20N120 Features

* NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits

* HiPerFRED™ diode - fast reverse recovery - low operating forward voltage - low leakage current

IXER20N120-IXYS.pdf