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IXEH40N120D1, IXEH40N120 Datasheet - IXYS Corporation

IXEH40N120D1 NPT3 IGBT

IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) VGE(th) I CES IGES QGon Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings ±1200 V ± 20 V 55 A 35 A 80 A 600 V 300 W Con.

IXEH40N120D1 Features

* IGBT with NPT (non punch through) structure

* reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery

* positive temperature coefficient of saturation voltage

* Epoxy of TO-247 packa

IXEH40N120_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXEH40N120D1, IXEH40N120. Please refer to the document for exact specifications by model.
IXEH40N120D1 Datasheet Preview Page 2 IXEH40N120D1 Datasheet Preview Page 3

Datasheet Details

Part number:

IXEH40N120D1, IXEH40N120

Manufacturer:

IXYS Corporation

File Size:

104.95 KB

Description:

Npt3 igbt.

Note:

This datasheet PDF includes multiple part numbers: IXEH40N120D1, IXEH40N120.
Please refer to the document for exact specifications by model.

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TAGS

IXEH40N120D1 IXEH40N120 NPT3 IGBT IXYS Corporation

IXEH40N120D1 Distributor