IXEH40N120D1, IXEH40N120 Datasheet - IXYS Corporation

IXEH40N120D1 - NPT3 IGBT

IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) VGE(th) I CES IGES QGon Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings ±1200 V ± 20 V 55 A 35 A 80 A 600 V 300 W Con.

IXEH40N120D1 Features

* IGBT with NPT (non punch through) structure

* reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery

* positive temperature coefficient of saturation voltage

* Epoxy of TO-247 packa

IXEH40N120_IXYSCorporation.pdf