IXER35N120D1 NPT3 IGBT with Diode

IXYS Corporation

Description

Advanced Technical Information www.DataSheet4U.com NPT3 IGBT with Diode in ISOPLUS 247TM IXER 35N120D1 IC25 VCES VCE(sat) typ.C G = 50 A = 1200 V .

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Datasheet Specifications

Part number: IXER35N120D1
Manufacturer: IXYS Corporation
File Size: 72.48 KB
Datasheet: IXER35N120D1_IXYSCorporation.pdf
Description: NPT3 IGBT with Diode

Features

* NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits
* HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current

Applications

* single switches
* choppers with complementary free wheeling diodes
* phaselegs, H bridges, three phase bridges e. g. for - power supplies, UPS - AC, DC and SR drives - induction heating Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.

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IXER35N120D1 NPT3 IGBT with Diode IXYS Corporation

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