IXER35N120D1 Datasheet - IXYS Corporation

IXER35N120D1 NPT3 IGBT with Diode

Advanced Technical Information www.DataSheet4U.com NPT3 IGBT with Diode in ISOPLUS 247TM IXER 35N120D1 IC25 VCES VCE(sat) typ. C G = 50 A = 1200 V = 2.2 V ISOPLUS 247TM E153432 G C E E G = Gate Isolated Backside C = Collector E = Emitter Patent pending IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive TC = 25°C .

IXER35N120D1 Features

* NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits

* HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current

IXER35N120D1_IXYSCorporation.pdf