IXER60N120 Datasheet - IXYS Corporation

IXER60N120 NPT3 IGBT

Advanced Technical Information www.DataSheet4U.com NPT3 IGBT in ISOPLUS 247TM IXER 60N120 IC25 VCES VCE(sat) typ. C G = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 G C E E G = Gate Isolated Backside C = Collector E = Emitter Patent pending IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions T.

IXER60N120 Features

* NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits

* ISOPLUS 247TM package - isolated back surface - low coupling capacity between pins and heatsink - high r

IXER60N120_IXYSCorporation.pdf