IXEH25N120D1, IXEH25N120 Datasheet - IXYS

IXEH25N120D1 NPT3 IGBT

IXEH 25N120 IXEH 25N120D1 www.DataSheet4U.com NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C TO-247 AD G G E E G C E C (TAB) IXEH 25N120 IXEH 25N120D1 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 36 24 60 VCES 10 200 V V A A A µs W .

IXEH25N120D1 Features

* NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits

* optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current

IXEH25N120_IXYS.pdf