NT1 Datasheet | Specifications & PDF Download

Chip NTC Thermistor – SDNT Series Operating Temp. : -55℃~+125℃ FEATURES ● SMD type suitable for high density mounting ● Series of B constant for vari

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t

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NTR4501NT1G N-Channel MOSFET SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE BJ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE BJ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 7, 10/2006 Gallium Arsenide CATV Integrated Amplifier M

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOEDT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE

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MINT1275 Single Output 275 Watts Medical Power Supply •3” x 5” x 1.38” Package, fits 1U application •Up to 275 W of AC-DC Power •Universal Input 90-26

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE BJ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3003NT1 is a

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SPEC. NUMBER S864-8B008 PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE BJ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMI

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Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3015NT1 is a

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NXP Semiconductors Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3006NT1 is a gene

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*RoHS COMPLIANT Features ■ Two channel quadrature output ■ Bushing or servo mount ■ Square wave signal ■ Small size ■ Resolution to 256 PPR ■ CMOS a

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12-Lane 12-Port PCIe® Gen2 System Interconnect Switch ® 89HPES12NT12G2 Datasheet Device Overview The 89HPES12NT12G2 is a member of the IDT family of

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBF2201NT1/D MMBF2201NT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFET

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Chip Temp. Sensing NTC Thermistor – SDNT Series Operating Temp. : -55℃~+125℃ FEATURES ● SMD type suitable for high density mounting ● Series of B con

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